Join MSMSE for this week's seminar featuring Alec Talin from Sandia National Laboratories. In this talk, you'll:

- Discover the post-CMOS future of computing that overcomes the physical and energetic limits of traditional binary electronics.
- See how we're eliminating the reliability gaps in analog design that have blocked commercialization, turning complex physics into predictable performance.
- Learn about our revolutionary 3-terminal memory that encodes information in a 3D volume, delivering unprecedented density and stable analog states.

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Abstract:
Over the past several decades, electronics have relied on deterministic, binary states accessed by electrons to store and process information. The challenge of physical scaling of this approach motivates the need for post-CMOS or post-digital analog approaches to increase functional density and energy efficiency. Instead of using only electron motion to encode information, analog electronics can use electrical, thermal and electrochemical gradients in various heterogeneously integrated materials to move electrons, ions, and domains. Understanding the scientific basis of these complex, frequently coupled mechanisms is difficult, resulting in few reliable physics-based models that can be used by circuit and chip designers. These mechanisms also present increased sensitivity to variability, noise, and poorly controlled kinetic processes. As such, despite decades of research and promising laboratory-scale performance, knowledge gaps in the features of analog electronics have led to their consistent failures to meet the stringent requirements needed for their commercialization. In my presentation, I will discuss our recent work to address these challenges using 3-terminal electrochemical random access memory (ECRAM)1 that encodes information in three dimensional volumes, rather than 2-dimensions channels or 1-dimensional filaments and combines thermodynamic and kinetic mechanisms to stabilize a high density of analog states.

(1) Talin, A. A.; Meyer, J.; Li, J.; Huang, M.; Schwacke, M.; Chung, H. W.; Xu, L.; Fuller, E. J.; Li, Y.; Yildiz, B. Electrochemical Random-Access Memory: Progress, Perspectives, and Opportunities. Chem. Rev. 2025, 125 (4), 1962-2008. DOI: 10.1021/acs.chemrev.4c00512.

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Event Details: boisestate.campusgroups.com/rsvp?id=391137